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| BCR10KM-12LA Triac Medium Power Use REJ03G0321-0100 Rev.1.00 Aug.20.2004 Features * * * * IT (RMS) : 10 A VDRM : 600 V IFGTI , IRGTI, IRGT : 30 mA (20 mA)Note5 Viso : 2000 V * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, washing machine, motor control, heater control, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Note1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.1.00, Aug.20.2004, page 1 of 7 BCR10KM-12LA Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 10 100 41.6 5 0.5 10 2 - 40 to +125 - 40 to +125 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 86C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2 -- 10 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 30Note5 30Note5 30Note5 -- 3.4 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 15 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 Gate non-trigger voltage Tj = 125C, VD = 1/2 VDRM Thermal resistance Junction to caseNote3 Critical-rate of rise of off-state Tj = 125C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 5 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c Rev.1.00, Aug.20.2004, page 2 of 7 BCR10KM-12LA Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) Tj = 125C Tj = 25C On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example Gate Voltage (V) VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A IRGT I, IRGT III VGT = 1.5V IFGT I IRGT I IFGT I, IRGT III VGD = 0.2V 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 101 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 7 BCR10KM-12LA Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (C/W) 10 7 5 3 2 2 10 7 5 3 2 1 10 7 5 3 2 0 10 7 5 3 2 -1 10 1 3 On-State Power Dissipation (W) No Fins 14 12 360 Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 16 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 160 Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted aluminum and greased 120 100 80 60 40 Ambient Temperature (C) 140 Curves apply regardless of conduction angle 140 120 100 80 Case Temperature (C) 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 360 Conduction 20 Resistive, inductive loads 0 4 8 2 6 0 10 12 14 16 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 4 8 2 6 0 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Repetitive Peak Off-State Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Junction Temperature (C) Rev.1.00, Aug.20.2004, page 4 of 7 BCR10KM-12LA Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 Typical Example Latching Current (mA) Distribution T2+, G- Typical Example T2+, G+ Typical Example T2-, G- 0 40 80 120 160 Junction Temperature (C) Junction Temperature (C) 160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 Typical Example Tj = 125C III Quadrant I Quadrant 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 3 2 101 7 5 3 2 100 7 100 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz Typical Example IFGT I IRGT I IRGT III Minimum Characteristics Value I Quadrant III Quadrant 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Rev.1.00, Aug.20.2004, page 5 of 7 BCR10KM-12LA Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure I 6 Test Procedure II 6V V A 330 Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR10KM-12LA Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR10KM-12LA BCR10KM-12LA-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0 |
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